The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Jan. 26, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaehyun Yoo, Suwon-si, KR;
Kyuok Lee, Yongin-si, KR;
Uihui Kwon, Hwaseong-si, KR;
Junhyeok Kim, Seoul, KR;
Yongwoo Jeon, Seoul, KR;
Dawon Jeong, Hwaseong-si, KR;
Jaehyok Ko, Suwon-si, KR;
Abstract
A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.