The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Jul. 02, 2021
Applicant:

Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, CN;

Inventors:

Feng Zhang, Beijing, CN;

Qirui Ren, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 7/02 (2006.01); G11C 7/06 (2006.01); G11C 11/15 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0059 (2013.01); G11C 2013/0045 (2013.01);
Abstract

A data readout circuit of a RRAM includes: an adaptive current sense amplifier (CSA) and a reference current generator, the adaptive CSA is configured to electrically connect to the RRAM, and the adaptive CSA is electrically connected to the reference current generator; the reference current generator is configured to generate a basic reference current; the adaptive CSA is configured to obtain a reference current according to the basic reference current and a bit-line current of the RRAM; and the adaptive CSA is configured to compare the size of the reference current and that of the bit-line current so as to read out stored data. The present disclosure can improve the problem of data readout error due to the degradation of high resistance state of the RRAM.


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