The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Nov. 11, 2019
Longi Green Energy Technology Co., Ltd., Shaanxi, CN;
LONGI GREEN ENERGY TECHNOLOGY CO., LTD., Shaanxi, CN;
Abstract
A method, apparatus and device for detecting a growth state of a crystalline line of a silicon rod, relating to the technical field of monocrystalline silicon, including in a process of constant-diameter growth of the silicon rod, acquiring a sample image of the silicon rod providing a detection area in the sample image, wherein the detection area overlaps with a crystalline-line growth line of the silicon rod generating a grayscale-value curve of the detection area, and according to the grayscale-value curve of the detection area, determining the growth state of the crystalline line of the silicon rod on the crystalline-line growth line. The method alleviates the affection on the detection of crystalline lines by the fluctuation of the diameter of the silicon rod and the unclarity of the features of the crystalline lines, thereby improving the accuracy and the efficiency of the detection on the crystalline lines.
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