The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

May. 25, 2020
Applicant:

Gs Yuasa International Ltd., Kyoto, JP;

Inventors:

Yuki Matsuda, Kyoto, JP;

Masakatsu Fujimatsu, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/3835 (2019.01); G01R 31/396 (2019.01); H01M 10/48 (2006.01);
U.S. Cl.
CPC ...
G01R 31/3835 (2019.01); G01R 31/396 (2019.01); H01M 10/48 (2013.01); H01M 10/482 (2013.01); H01M 2220/20 (2013.01);
Abstract

A voltage measurement circuit includes: voltage dividing circuits that divide voltages of energy storage devices, in respective stages connected in series; switches that cut off the currents of the voltage dividing circuits in the respective stages, and a measurement unit that measures the voltages of the energy storage devices in the respective stages based on outputs of the voltage dividing circuits in the respective stages. The voltage dividing circuits in the respective stages each have a first resistor connected to the ground and a second resistor connected to a positive electrode of the corresponding energy storage device. The switch in a predetermined-number stage among the switches in the respective stages is an N-channel field-effect transistor (FET) having a source connected to the first resistor and a drain connected to the second resistor, and the source of the FET is a voltage output terminal with respect to the measurement unit.


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