The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Jul. 12, 2019
Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, CN;
Bin Mu, Lanzhou, CN;
Aiqin Wang, Lanzhou, CN;
Xiaowen Wang, Lanzhou, CN;
Aiping Hui, Lanzhou, CN;
Yuru Kang, Lanzhou, CN;
Wenbo Wang, Lanzhou, CN;
Li Zong, Lanzhou, CN;
Yongfeng Zhu, Lanzhou, CN;
Qin Wang, Lanzhou, CN;
Abstract
The present disclosure relates to a method for preparation of a high temperature-resistant bismuth yellow pigment. The method comprises: mixing an oxide which served as a matrix and dopan with a bismuth source, a vanadium source, or a molybdenum source, and then placing the mixture into a mill for grinding to obtain a precursor; further calcining and crushing the precursor to obtain the high temperature-resistant bismuth yellow pigment powder. The bismuth yellow pigment has a bright color, a b* value greater than 90, a stable performance, and a high heat-resistance above 800° C. The method is environmentally friendly without waste, and reaction conditions are simple. Doping of BiVOcrystal lattices by incorporation of oxides can be achieved, so that the particle size and distribution of the bismuth yellow pigment can be effectively controlled while the color performance of the bismuth yellow pigment is greatly improved.