The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Sep. 02, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Milan Pe{hacek over (s)}ić, San Jose, CA (US);

Bastien Beltrando, Marseilles, FR;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G06N 3/063 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); G06N 3/063 (2013.01); H10B 63/00 (2023.02); H10N 70/8833 (2023.02);
Abstract

A device may include a first electrode, a barrier layer, and a tunneling layer having a first dielectric constant. The barrier layer may be between the first electrode and the tunneling layer. The device may also include an active layer having a second dielectric constant. The tunneling layer may be between the first electrode and the active layer. The device may further include a second electrode. The active layer may be between the tunneling layer and the second electrode.


Find Patent Forward Citations

Pe{hacek over (s)}ić, Milan. (2024). Optimized selector and memory element with electron barrier (U.S. Patent No. 11997936). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11997936

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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