The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Mar. 09, 2022
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Zachariah B. Hennighausen, Mount Rainier, MD (US);
Kathleen M. McCreary, Washington, DC (US);
Olaf M. J. van 't Erve, Falls Church, VA (US);
Berend T. Jonker, Davidsnville, MD (US);
Abstract
A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on BiSe/WSat room temperature, comprising the steps of applying a laser to the BiSe/WS, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing BiSe/WSas a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the BiSe/WSheterostructure at room temperature.