The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Dec. 21, 2018
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyun Min Cho, Hwaseong-si, KR;

Shin Il Choi, Hwaseong-si, KR;

Sang Gab Kim, Seoul, KR;

Tae Sung Kim, Incheon, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10K 71/16 (2023.01); H10K 71/20 (2023.01); H10K 71/00 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 71/233 (2023.02); H10K 59/1216 (2023.02); H10K 59/124 (2023.02); H10K 71/166 (2023.02); H10K 71/00 (2023.02); H10K 2102/00 (2023.02); H10K 2102/351 (2023.02);
Abstract

A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.


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