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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11997856 B1

PDFFull Text
Date of Patent:
May. 28, 2024

Filed:

May. 03, 2021

Photoelectric devices and image sensors and electronic devices

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyung Bae Park, Hwaseong-si, KR;

Takkyun Ro, Hwaseong-si, KR;

Kiyohiko Tsutsumi, Suwon-si, KR;

Chul Joon Heo, Busan, KR;

Yong Wan Jin, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

David Vu

Assistant Examiner:

Brandon C Fox

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H10K 30/10 (2023.01); H10K 30/81 (2023.01); H10K 39/32 (2023.01); H10K 85/20 (2023.01); H10K 85/60 (2023.01); H10K 30/30 (2023.01); H10K 30/57 (2023.01); H10K 102/10 (2023.01);
U.S. Cl.
CPC ...
H10K 30/10 (2023.02); H01L 27/14647 (2013.01); H01L 27/14665 (2013.01); H10K 30/81 (2023.02); H10K 39/32 (2023.02); H10K 85/211 (2023.02); H10K 85/636 (2023.02); H10K 85/657 (2023.02); H01L 27/14621 (2013.01); H10K 30/30 (2023.02); H10K 30/57 (2023.02); H10K 85/633 (2023.02); H10K 85/652 (2023.02); H10K 85/6572 (2023.02); H10K 85/6576 (2023.02); H10K 2102/103 (2023.02);
Abstract

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ) of the first photoelectric conversion layer and a peak absorption wavelength (λ) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

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