The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Jul. 06, 2023
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Ki Hong Lee, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H01L 28/40 (2013.01); H01L 29/0673 (2013.01); H01L 29/0684 (2013.01); H01L 29/42392 (2013.01); H01L 29/78654 (2013.01); H01L 29/78672 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/48 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/50 (2023.02); H10B 12/488 (2023.02);
Abstract
A memory cell comprising a substrate, a bit line vertically oriented from the substrate along a first direction, a nanosheet transistor including at least one nanosheet horizontally oriented from the bit line along a second direction perpendicular to the first direction, and a capacitor horizontally oriented from the nanosheet transistor along the second direction.