The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Sep. 21, 2022
Wuhan Memsonics Technologies Co., Ltd., Wuhan, CN;
Yang Zou, Wuhan, CN;
Yan Liu, Wuhan, CN;
Yao Cai, Wuhan, CN;
Chengliang Sun, Wuhan, CN;
Bowoon Soon, Singapore, SG;
Wuhan MEMSonics Technologies Co., Ltd., Wuhan, CN;
Abstract
A resonator, a filter and a duplexer, which relate to the technical field of resonators. The resonator includes: a substrate, and a lower electrode layer, a piezoelectric layer and an upper electrode layer, which are sequentially formed on the substrate, wherein an acoustic reflection structure is formed on a surface of the substrate that is close to the lower electrode layer, and an overlapping region of the acoustic reflection structure, the lower electrode layer, the piezoelectric layer and the upper electrode layer along a stacking direction forms a resonant region; and in the resonant region, the surface, which is away from the substrate, of at least one of the lower electrode layer, the piezoelectric layer and the upper electrode layer is etched to form an etched region, the depth of the etched region is less than the thickness of an etched layer, and the area of the etched region is less than the area of the resonant region. By means of controlling an etching area ratio of the resonant region to the etched region, the resonator can obtain a plurality of different resonant frequencies on the same wafer without increasing processes.