The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Feb. 20, 2019
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventor:

Masumi Kubo, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); H01L 33/005 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A method for manufacturing a light-emitting device includes forming the quantum dot layer. The forming the quantum dot layer includes: performing first application that involves applying a first solution on a position overlapping with the substrate; performing first light irradiation, that involves irradiating with light, from above the substrate, the position where the first solution is applied; performing second light irradiation, that involves irradiating the position with light to raise a temperature of the quantum dot; and performing third light irradiation, that involves irradiating the position with light to cause the first inorganic precursor to epitaxially grow around the first shell. In the performing third light irradiation, at least one set of the quantum dots adjacent to each other is connected to each other via the second shell.


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