The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Nov. 08, 2022
Applicant:

Dowa Electronics Materials Co., Ltd., Tokyo, JP;

Inventors:

Jumpei Yamamoto, Akita, JP;

Tetsuya Ikuta, Akita, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/30 (2013.01); H01L 33/0062 (2013.01); H01L 33/40 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.


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