The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Jun. 06, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Assignee:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); G02B 6/122 (2006.01); G02B 6/132 (2006.01); H01L 31/028 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); G02B 6/1228 (2013.01); G02B 6/132 (2013.01); H01L 31/028 (2013.01); H01L 31/103 (2013.01); H01L 31/1808 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12123 (2013.01);
Abstract
A silicon nitride core is formed on a silicon core via a first silicon oxide layer, and a germanium pattern caused to selectively grow in an opening penetrating through a second silicon oxide layer formed on the silicon nitride core and the first silicon oxide layer is formed on a lower silicon pattern formed to be continuous with the silicon core, thereby constituting a Ge photodiode.