The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Apr. 26, 2019
Applicant:
Sharp Kabushiki Kaisha, Osaka, JP;
Inventors:
Hiroaki Furukawa, Sakai, JP;
Yuhichi Saitoh, Sakai, JP;
Tomohisa Aoki, Sakai, JP;
Atsushi Hachiya, Sakai, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/786 (2006.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78672 (2013.01); H01L 29/7869 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02);
Abstract
A crystalline silicon semiconductor layer includes a first channel region and a second conductor region. An oxide semiconductor layer includes a second channel region and a second conductor region. An lower metal layer includes a lower wire. The lower wire is in contact with a first conductor region in a first contact hole. The first conductor region and the second conductor region are electrically connected together through the lower wire.