The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Jan. 04, 2022
Fuji Electric Co., Ltd., Kawasaki, JP;
Masakazu Baba, Matsumoto, JP;
Shinsuke Harada, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
One object is to provide a semiconductor device capable of reducing loss during turn-on and degradation of forward voltage. A vertical MOSFET includes a semiconductor substrateof a first conductivity type, a first semiconductor layerof the first conductivity type, a second semiconductor layerof a second conductivity type, first semiconductor regionsof the first conductivity type, first trenchesand a second trench, gate electrodesprovided in the first trenchesvia a gate insulating film, and a Schottky electrodeprovided in the second trench. The first trenchesare provided in a striped pattern, in a plan view and the second trenchsurrounds the first trenches