The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Apr. 28, 2023
Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventor:

Ramanathan Gandhi, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); A61B 17/068 (2006.01); A61B 17/072 (2006.01); A61B 17/10 (2006.01); H01L 29/49 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); A61B 17/00 (2006.01); A61B 17/29 (2006.01); A61B 90/00 (2016.01);
U.S. Cl.
CPC ...
H01L 29/4234 (2013.01); A61B 17/068 (2013.01); A61B 17/07207 (2013.01); A61B 17/105 (2013.01); H01L 29/4958 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); A61B 2017/00473 (2013.01); A61B 17/072 (2013.01); A61B 2017/07257 (2013.01); A61B 2017/07271 (2013.01); A61B 2017/07278 (2013.01); A61B 2017/07285 (2013.01); A61B 2017/2927 (2013.01); A61B 2090/0814 (2016.02);
Abstract

Some embodiments include a memory cell having a conductive gate comprising ruthenium. A charge-blocking region is adjacent the conductive gate, a charge-storage region is adjacent the charge-blocking region, a tunneling material is adjacent the charge-storage region, and a channel material is adjacent the tunneling material. Some embodiments include an assembly having a vertical stack of alternating insulative levels and wordline levels. The wordline levels contain conductive wordline material which includes ruthenium. Semiconductor material extends through the stack as a channel structure. Charge-storage regions are between the conductive wordline material and the channel structure. Charge-blocking regions are between the charge-storage regions and the conductive wordline material. Some embodiments include methods of forming integrated assemblies.


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