The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11996452 B1

Date of Patent:

May. 28, 2024

Filed:

Jan. 13, 2021

Semiconductor device including an igbt with reduced variation in threshold voltage

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Motoyoshi Kubouchi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Jesse Y Miyoshi

Int. Cl.

CPC ...

H01L 29/32 (2006.01); H01L 21/22 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);

U.S. Cl.

CPC ...

H01L 29/32 (2013.01); H01L 21/221 (2013.01); H01L 27/0664 (2013.01); H01L 29/1095 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);

Abstract

There is provided a semiconductor device including: a semiconductor substrate that has an upper surface and a lower surface and that is provided with a drift region of a first conductivity type; a trench portion that is provided to reach the drift region from the upper surface of the semiconductor substrate; and a mesa portion that is interposed between trench portions, in which the mesa portion has a base region of a second conductivity type that is provided between the drift region and the upper surface, and a first region that has a concentration peak of a hydrogen chemical concentration at a first depth position in the mesa portion.

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