The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Jun. 09, 2020
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Zhaohui Qiang, Beijing, CN;

Li Qiang, Beijing, CN;

Chao Luo, Beijing, CN;

Huiqin Zhang, Beijing, CN;

Rui Huang, Beijing, CN;

Zhi Wang, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/1248 (2013.01); H01L 27/127 (2013.01); H01L 29/42384 (2013.01); H01L 29/78696 (2013.01); G02F 1/13624 (2013.01); G02F 1/1368 (2013.01); H10K 59/1213 (2023.02);
Abstract

A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.


Find Patent Forward Citations

Loading…