The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Nov. 09, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Alvaro Garcia De Gorordo, Mountain View, CA (US);

Zhonghua Yao, Santa Clara, CA (US);

Sunil Srinivasan, San Jose, CA (US);

Sang Wook Park, Mountain View, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02112 (2013.01); H01L 21/02263 (2013.01); H01L 21/0234 (2013.01); H01L 21/02348 (2013.01); B81C 2201/0138 (2013.01); H01L 21/0228 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01);
Abstract

The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.


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