The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Jul. 03, 2023
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Yogesh K. Ramadass, San Jose, CA (US);
Ujwal Radhakrishna, San Jose, CA (US);
Vinod Kuniganahalli Rai, San Jose, CA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01H 85/048 (2006.01); H01H 85/00 (2006.01); H01H 85/02 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01H 85/048 (2013.01); H01H 85/0052 (2013.01); H01H 85/0241 (2013.01); H02H 9/042 (2013.01);
Abstract
A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.