The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Jun. 15, 2022
Seagate Technology Llc, Fremont, CA (US);
Jon D. Trantham, Chanhassen, MN (US);
Praveen Viraraghavan, Chicago, IL (US);
John W. Dykes, Eden Prairie, MN (US);
Ian J. Gilbert, Chanhassen, MN (US);
Sangita Shreedharan Kalarickal, Eden Prairie, MN (US);
Matthew J. Totin, Excelsior, MN (US);
Mohamad El-Batal, Superior, CO (US);
Darshana H. Mehta, Shakopee, MN (US);
SEAGATE TECHNOLOGY LLC, Fremont, CA (US);
Abstract
A non-volatile memory (NVM) is formed of memory cells each having multiple ferroelectric memory elements (FMEs). Each FME stores data in relation to an electrical polarity of a recording layer formed of ferroelectric or anti-ferroelectric material. Each multi-FME memory cell is coupled to a set of external control lines activated by a control circuit in a selected order to perform program and/or read operations upon the FMEs. The FMEs may share a nominally identical construction or may have different constructions. Data are programmed and written responsive to the respective program/read responses of the FMEs. Constructions can include ferroelectric tunneling junctions (FTJs), ferroelectric random access memory (FeRAM), and ferroelectric field effect transistors (FeFETs). The NVM may form a portion of a data storage device, such as a solid-state drive (SSD).