The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Nov. 02, 2021
The Johns Hopkins University, Baltimore, MD (US);
John B. Abraham, Baltimore, MD (US);
Brian D. Clader, Ellicott City, MD (US);
Robert Osiander, Columbia, MD (US);
Cameron A. Gutgsell, Laurel, MD (US);
Dalibor J. Todorovski, Columbia, MD (US);
Scott A. Sperling, Baltimore, MD (US);
Jacob E. Epstein, Takoma Park, MD (US);
Timothy M. Sweeney, Fulton, MD (US);
Elizabeth A. Pogue, Laurel, MD (US);
Tyrel M. McQueen, Baltimore, MD (US);
The Johns Hopkins University, Baltimore, MD (US);
Abstract
A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.