The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Mar. 04, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jong Choi, San Diego, CA (US);

Christopher Ahles, San Diego, CA (US);

Andrew C. Kummel, San Diego, CA (US);

Keith Tatseun Wong, Los Gatos, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/458 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/401 (2013.01); C23C 16/4583 (2013.01); H01L 21/02142 (2013.01); H01L 21/0228 (2013.01); H01L 21/28518 (2013.01); H01L 21/02211 (2013.01);
Abstract

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.


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