The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Jan. 28, 2021
Beihang University, Beijing, CN;
Weisheng Zhao, Beijing, CN;
Daoqian Zhu, Beijing, CN;
Zongxia Guo, Beijing, CN;
Kaihua Cao, Beijing, CN;
Shouzhong Peng, Beijing, CN;
BEIHANG UNIVERSITY, Beijing, CN;
Abstract
The present disclosure provides a magnetic random-access memory, comprising: an antiferromagnetic layer; a magnetic tunnel junction disposed on the antiferromagnetic layer and comprising a ferromagnetic layer disposed corresponding to the antiferromagnetic layer; wherein the ferromagnetic layer of the magnetic tunnel junction has in-plane magnetic anisotropy, and an exchange bias field is formed between the antiferromagnetic layer and the ferromagnetic layer by an annealing process. A direction of the exchange bias field is changed by a spin orbit torque, thereby changing a direction of a magnetic moment of the ferromagnetic layer and realizing data writing. The present disclosure can improve a thermal stability of the i-MTJ and reduce a lateral dimension of the i-MTJ, thereby improving a storage density of the magnetic memory.