The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Feb. 05, 2021
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Yasunari Umemoto, Nagaokakyo, JP;

Shaojun Ma, Nagaokakyo, JP;

Shigeki Koya, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/302 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H03F 2200/451 (2013.01);
Abstract

A first amplifier circuit in a preceding stage, a second amplifier circuit in a subsequent stage, and a ground external connection terminal are disposed on a substrate. The first and second amplifier circuits each include bipolar transistors, capacitive elements for the respective bipolar transistors, and resistive elements for the respective bipolar transistors. The bipolar transistors each include separate base electrodes, that is, a first base electrode for radio frequency and a second base electrode for biasing. The bipolar transistors of the second amplifier circuit include emitter electrodes connected to the ground external connection terminal. The minimum spacing between the first base electrode and an emitter mesa layer of at least one of the bipolar transistors of the second amplifier circuit is greater than the minimum spacing between the first base electrode and am emitter mesa layer of each of the bipolar transistors of the first amplifier circuit.


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