The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Jun. 19, 2019
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Yuta Aoki, Nara, JP;

Kazuyoshi Hirose, Hamamatsu, JP;

Satoru Okawara, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/11 (2021.01); H01S 5/185 (2021.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/18305 (2013.01); H01S 5/185 (2021.01); H01S 5/34333 (2013.01);
Abstract

A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.


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