The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Jun. 02, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Hiroatsu Todoriki, Kanagawa, JP;

Yumiko Saito, Kanagawa, JP;

Takahiro Kawakami, Kanagawa, JP;

Kuniharu Nomoto, Saitama, JP;

Mikio Yukawa, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/583 (2010.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 32/192 (2017.01); C01B 32/23 (2017.01); H01G 9/042 (2006.01); H01G 11/22 (2013.01); H01G 11/32 (2013.01); H01G 11/36 (2013.01); H01M 4/04 (2006.01); H01M 4/133 (2010.01); H01M 4/139 (2010.01); H01M 4/1393 (2010.01); H01M 4/587 (2010.01); H01M 4/62 (2006.01); H01M 6/16 (2006.01); H01M 10/0566 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/5835 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 32/192 (2017.08); C01B 32/23 (2017.08); H01G 9/042 (2013.01); H01G 11/22 (2013.01); H01G 11/32 (2013.01); H01G 11/36 (2013.01); H01M 4/0438 (2013.01); H01M 4/133 (2013.01); H01M 4/139 (2013.01); H01M 4/1393 (2013.01); H01M 4/587 (2013.01); H01M 4/62 (2013.01); H01M 6/16 (2013.01); H01M 10/0566 (2013.01); H01M 10/0525 (2013.01); Y02E 60/13 (2013.01);
Abstract

The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.


Find Patent Forward Citations

Loading…