The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Jan. 08, 2020
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventor:

Franz Eberhard, Kilchberg, CH;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/32 (2013.01); H01L 2933/0025 (2013.01);
Abstract

An optoelectronic semiconductor device may include a first semiconductor layer and a second semiconductor layer, the first and second semiconductor layers being stacked one above the other. The device may include a first contact structure and a contact layer. The device may include a separating layer arranged over a side of the contact layer, and a current spreading layer arranged over a side of the separating layer facing away from the contact layer. The first contact structure may be connected to the contact layer via the current spreading layer and the separating layer. A layer stack may include the contact layer, the separating layer, and the current spreading layer has an anisotropic conductivity. The separating layer is present as a continuous layer in a region between the contact layer and the current spreading layer.


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