The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Nov. 23, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ryong Ha, Seoul, KR;

Seok Hoon Kim, Suwon-si, KR;

Jung Taek Kim, Yongin-si, KR;

Pan Kwi Park, Incheon, KR;

Moon Seung Yang, Hwaseong-si, KR;

Seo Jin Jeong, Incheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 29/6653 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H01L 29/42392 (2013.01);
Abstract

A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.


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