The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Oct. 29, 2021
Applicants:
Hyundai Motor Company, Seoul, KR;
Kia Corporation, Seoul, KR;
Inventors:
Junghee Park, Suwon-si, KR;
Dae Hwan Chun, Suwon-si, KR;
Jungyeop Hong, Seoul, KR;
Youngkyun Jung, Seoul, KR;
Nackyong Joo, Suwon-si, KR;
Assignees:
Hyundai Motor Company, Seoul, KR;
Kia Corporation, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 29/401 (2013.01); H01L 29/51 (2013.01); H01L 29/512 (2013.01); H01L 29/518 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01);
Abstract
A semiconductor device includes an n− type layer on a first surface of the substrate, a p type region on a part of the n− type layer, a gate on the n− type layer and the p type region, a first gate protection layer on the gate and a second gate protection layer on the first gate protection layer, a source on the second gate protection layer and the p type region, and a drain on the second surface of the substrate.