The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Nov. 22, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andre Brockmeier, Villach, AT;

Guenter Denifl, Annenheim, AT;

Ronny Kern, Finkenstein, AT;

Michael Knabl, Finkenstein, AT;

Matteo Piccin, Villach, AT;

Francisco Javier Santos Rodriguez, Villach, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/544 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.


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