The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Jan. 05, 2022
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Qin Wang, San Jose, CA (US);

Hui Zang, San Jose, CA (US);

Assignee:

OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14638 (2013.01); H01L 27/1463 (2013.01);
Abstract

Pixels, such as for image sensors and electronic devices, include a photodiode formed in a semiconductor substrate, a floating diffusion, and a transfer structure selectively coupling the photodiode to the floating diffusion. The transfer structure includes a transfer gate formed on the semiconductor substrate, and a vertical channel structure including spaced apart first doped regions formed in the semiconductor substrate between the transfer gate and the photodiode. Each spaced apart first doped region is doped at a first dopant concentration with a first-type dopant. The spaced apart first doped regions are formed in a second doped region doped at a second dopant concentration with a second-type dopant of a different conductive type.


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