The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Feb. 17, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Jia Liu, Yokohama, JP;

Masahiko Hori, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/66 (2006.01); H01L 31/12 (2006.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 23/3121 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 31/12 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes: a substrate that has a first surface extending in a first direction and a second direction; a first metal oxide semiconductor field effect transistor (MOSFET) that is provided on the first surface of the substrate; a support base that is provided above the first surface of the substrate and extends in a third direction intersecting the first direction and the second direction; a light receiving element that is in contact with a second surface of the support base facing the first direction; and a light emitting element that is in contact with a third surface of the light receiving element facing the first direction.


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