The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Feb. 24, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chanyeong Jeong, Gwacheon-si, KR;

Hoseop Choi, Hwaseong-si, KR;

Sunggil Kang, Hwaseong-si, KR;

Dongkyu Shin, Seoul, KR;

Sangjin An, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01J 37/321 (2013.01); H01J 37/32229 (2013.01); H01J 37/3244 (2013.01); H01J 37/32522 (2013.01); H01J 37/32724 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01);
Abstract

A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.


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