The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Dec. 06, 2019
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Wayne Mack Struble, Franklin, MA (US);

Timothy Edward Boles, Tyngsboro, MA (US);

Jason Matthew Barrett, Amherst, NH (US);

John Stephen Atherton, Acton, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/033 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/0331 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01);
Abstract

A method of manufacturing an electrode structure for a device, such as a GaN or AlGaN device is described. In one example, the method includes providing a substrate () of GaN or AlGaN with a surface region of the GaN or AlGaN exposed through an opening () in a layer of silicon nitride () formed on the substrate. The method further includes depositing layers of W (), in one example, or Ni () and W (), in another example, on the substrate and the layer of silicon nitride using reactive evaporation and photoresist layers () having an undercut profile for liftoff. The method further includes removing the photoresist layers having the undercut profile, and depositing layers of WN () and Al over the underlying layers of W or Ni and W by sputtering.


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