The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Oct. 15, 2020
Microchip Technology Incorporated, Chandler, AZ (US);
Paul Fest, Chandler, AZ (US);
Microchip Technology Incorporated, Chandler, AZ (US);
Abstract
A process is provided for forming an integrated thin film resistor (TFR) in an integrated circuit (IC) device including IC elements and IC element contacts. A TFR film layer and TFR dielectric layer are formed over the IC structure, and a wet etch is performed to define a dielectric cap with sloped lateral edges over the TFR film layer. Exposed portions of the TFR film layer are etched to define a TFR element. A TFR contact etch forms contact openings over the TFR element, and a metal layer is formed to form metal layer connections to the IC element contacts and the TFR element. The sloped edges of the dielectric cap may improve the removal of metal adjacent the TFR element to prevent electrical shorts in the completed device. A TFR anneal to reduce a TCR of the TFR is performed at any suitable time before forming the metal layer.