The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Dec. 21, 2021
Applicant:

Ihp Gmbh—innovations for High Performance Microelectronics/ Leibniz-institut Fur Innovative Mikroel, Frankfurt, DE;

Inventors:

Andreas Mai, Frankfurt, DE;

Patrick Steglich, Frankfurt, DE;

Christian Mai, Frankfurt, DE;

Catherine Dubourdieu, Berlin, DE;

Veeresh Deshpande, Berlin, DE;

Dong-Jik Kim, Berlin, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01);
Abstract

The present invention relates to a slot waveguide formed by a vertical material stack comprising a top layer with a first refractive index, a center layer including a ferroelectric material and with a second refractive index, and a SiGepseudosubstrate layer with 0<x≤1 and with a third refractive index. The center layer is grown on the SiGepseudosubstrate layer. The second refractive index is lower than the first refractive index and lower than the third refractive index. The slot waveguide can be included in a phase-shifter including two vertically arranged electrodes configured for providing a vertical electrical field (E) extending between the top layer and the bottom layer of the slot waveguide and for providing a complementary-metal-oxide-semiconductor compatible driver voltage. The phase-shifter can be configured for providing a linear electro-optical effect inside the center layer of the slot waveguide.


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