The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Dec. 13, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Kei Takahashi, Isehara, JP;
Takayuki Ikeda, Atsugi, JP;
Ryota Tajima, Isehara, JP;
Mayumi Mikami, Atsugi, JP;
Yohei Momma, Isehara, JP;
Munehiro Kozuma, Atsugi, JP;
Takanori Matsuzaki, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device that detects deterioration of a secondary battery is provided. The semiconductor device includes a power gauge, an anomalous current detection circuit, and a control circuit. The power gauge includes a current divider circuit and an integrator circuit. The anomalous current detection circuit includes a first memory, a second memory, and a first comparator. The integrator circuit can convert a detection current detected at the current divider circuit into a detection voltage by integrating the detection current. The anomalous current detection circuit is supplied with the detection voltage, a first signal at a first time, and a second signal at a second time. The first signal can make the detection voltage at the first time be stored in the first memory and the second signal can make the detection voltage at the second time be stored in the second memory. The first comparator outputs a change from the detection voltage at the first time to the detection voltage at the second time as a first output signal to the control circuit.