The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Nov. 08, 2018
Applicant:

Nippon Sheet Glass Company, Limited, Tokyo, JP;

Inventors:

Koichiro Nakamura, Kanagawa, JP;

Satoru Kusaka, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09D 183/04 (2006.01); C08K 7/24 (2006.01); C09D 7/61 (2018.01); G02B 1/111 (2015.01); G02B 1/118 (2015.01);
U.S. Cl.
CPC ...
C09D 183/04 (2013.01); C09D 7/61 (2018.01); G02B 1/111 (2013.01); G02B 1/118 (2013.01); C08K 7/24 (2013.01); C08K 2201/003 (2013.01); C08K 2201/011 (2013.01);
Abstract

A film () includes hollow particles () and a binder (). The hollow particles are made of a material having a refractive index of 1.15 to 2.70. The binder () is formed of at least a polysilsesquioxane and binds the hollow particles (). The film () satisfies at least one of requirements Ib/Ia≥0.7 and Ib/Ic≥0.3. Ia is an absorbance derived from a hydrocarbon group not directly bonded to a silicon atom, the absorbance being determined by attenuated total reflection using a Fourier transform infrared spectrophotometer. Ib is an absorbance derived from a bond between a silicon atom and a non-reactive functional group. Ic is an absorbance derived from a bond between a silicon atom and a hydroxy group.


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