The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Dec. 10, 2019
Applicant:

Societe DE Commercialisation Des Produits DE LA Recherche Appliquée Socpra Sciences ET Génie S.e.c., Sherbrooke, CA;

Inventors:

Brigitte Guerin, Westbury, CA;

Sebastien Tremblay, Sherbrooke, CA;

Samia Ait-Mohand, Sherbrooke, CA;

Aiman H. Alnahwi, Dammam, SA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 47/026 (2017.01); A61B 6/03 (2006.01); A61K 51/08 (2006.01); B01J 39/26 (2006.01); G21G 1/00 (2006.01); G21G 1/10 (2006.01);
U.S. Cl.
CPC ...
B01J 47/026 (2013.01); A61K 51/083 (2013.01); B01J 39/26 (2013.01); A61B 6/037 (2013.01); G21G 2001/0021 (2013.01); G21G 1/10 (2013.01);
Abstract

The present disclosure relates processes and systems for producing and/or purifyingGa from an irradiated substrate ofZn. In some embodiments, the process rely on the use two cation-exchange chromatography columns to separateGa fromZn and other radionuclides and metallic impurities. The process achieves a high overall yield ofGa and a high effective molar activity while being implementable in a time compatible with the short half-life ofGa. In additional embodiments, the process is implemented by an automated system.


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