The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Feb. 23, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Dong Uk Lee, Icheon-si, KR;
Hae Chang Yang, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 43/35 (2023.01); H10B 51/20 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H10B 51/20 (2023.02);
Abstract
A switching element comprising: a first gate dielectric layer formed over a substrate; a second gate dielectric layer formed over the first gate dielectric layer to overlap a part of the first gate dielectric layer, and including a ferroelectric material; a second gate electrode formed over the second gate dielectric layer; and a first gate electrode located between the first and second gate dielectric layers, and configured to control the second gate dielectric layer to selectively have negative capacitance.