The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Nov. 21, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Tetsuo Gocho, Kanagawa, JP;

Masami Nagata, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/77 (2023.01); H01L 27/146 (2006.01); A61B 1/05 (2006.01); G02B 23/24 (2006.01);
U.S. Cl.
CPC ...
H04N 25/77 (2023.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); A61B 1/05 (2013.01); G02B 23/2407 (2013.01); H01L 27/14625 (2013.01); H01L 27/1463 (2013.01); H01L 27/14683 (2013.01);
Abstract

A solid-state image sensor according to the present disclosure includes a first semiconductor substrate having a photoelectric conversion element and a second semiconductor substrate facing the first semiconductor substrate with an insulating film interposed therebetween, in which the second semiconductor substrate has an amplification transistor that amplifies an electrical signal output from the photoelectric conversion element on a first main surface (MSa), has a region having a resistance lower than a resistance of the second semiconductor substrate on a second main surface (MSb) opposite to the first main surface (MSa), and is grounded via the region.


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