The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Jul. 23, 2021
Nu-trek, Inc., San Diego, CA (US);
Stephen Holden Black, Tennessee Ridge, TN (US);
Paul Richard Behmen, Chester, CA (US);
Francisco Tejada, Kingsville, MD (US);
Nu-Trek, Inc., San Diego, CA (US);
Abstract
Bias circuit elements for applying voltages/currents to a photodetector are described. Bias circuit elements described are active devices, e.g. mosfets, directly connected to the photodetector signal point, which inject noise that will be amplified/integrated. Lowering 1/f noise in these bias devices uses multiple parallel mosfets and switching the parallel mosfets gates between a bias activation level signal and a voltage sufficient to drive the mosfet into accumulation Gate switching may be accomplished by at least two partially out of phase clocking signals, with at least one parallel mosfet applying bias while another is in accumulation in continuously switched time periods. Gate switching at a frequency higher than the imaging bandwidth, will have negligible effect on the image signal. During the accumulation phase traps present within the conducting channel of each MOSFET will be depopulated, essentially resetting the MOSFET's 1/f noise, allowing for long integration times while controlling 1/f noise.