The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Nov. 03, 2021
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Andreas Suess, San Jose, CA (US);

Zheng Yang, San Jose, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/46 (2023.01); G01S 7/481 (2006.01); G01S 17/894 (2020.01); H04N 25/44 (2023.01); H04N 25/441 (2023.01); H04N 25/705 (2023.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H04N 25/46 (2023.01); G01S 7/4816 (2013.01); G01S 17/894 (2020.01); H04N 25/44 (2023.01); H04N 25/441 (2023.01); H04N 25/705 (2023.01); H04N 25/75 (2023.01);
Abstract

A time-of-flight pixel array includes photodiodes that generate charge in response to incident reflected modulated light. First transfer transistors transfer a first portion of the charge from the photodiodes in response to a first modulation signal and second transfer transistors transfer a second portion of the charge from the photodiodes in response to a second modulation signal, which is an inverted first modulation signal. First floating diffusions are coupled to the first transfer transistors. A binning transistor is coupled between one of the first floating diffusions and another one of the first floating diffusions. A first memory node is coupled to one of the first floating diffusions through a first sample and hold transistor and a second memory node is coupled to another one of the first floating diffusions through a second sample and hold transistor.


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