The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Jun. 22, 2021
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

KooHwa Lee, Daegu, KR;

WooNam Jeong, Paju-si, KR;

HyeonHo Son, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 27/15 (2006.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 27/156 (2013.01); H01L 33/42 (2013.01);
Abstract

Provided is a light emitting device. A light emitting device includes a first n-type semiconductor layer, a first light emitting layer disposed on the first n-type semiconductor layer, a first p-type semiconductor layer disposed on the first light emitting layer, a second p-type semiconductor layer disposed on the first p-type semiconductor layer, a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer, a second light emitting layer disposed on the second p-type semiconductor layer, a second n-type semiconductor layer disposed on the second light emitting layer, a p-type electrode disposed on the second p-type semiconductor layer, a first n-type electrode disposed on the first n-type semiconductor layer, and a second n-type electrode disposed on the second n-type semiconductor layer.


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