The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Nov. 08, 2019
South China University of Technology, Guangzhou, CN;
Miao Xu, Guangzhou, CN;
Hua Xu, Guangzhou, CN;
Weijing Wu, Guangzhou, CN;
Weifeng Chen, Guangzhou, CN;
Lei Wang, Guangzhou, CN;
Junbiao Peng, Guangzhou, CN;
South China University of Technology, Guangzhou, CN;
Abstract
The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.