The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Nov. 30, 2021
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Henry Litzmann Edwards, Garland, TX (US);
Andres Arturo Blanco, Garland, TX (US);
Orlando Lazaro, Cary, NC (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7826 (2013.01); H01L 29/66681 (2013.01);
Abstract
IC apparatus, and manufacturing methods therefor, that include a power transistor and a thermoelectric device. The power transistor is constructed in a plurality of layers formed over a semiconductor substrate. The thermoelectric device is formed in one or more of the plurality of layers and is sensitive to temperature differences within the IC apparatus resulting from operation of the power transistor.