The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Sep. 23, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicolas Loubet, Guilderland, NY (US);

Shogo Mochizuki, Mechanicville, NY (US);

Kirsten Emilie Moselund, Rüschlikon, CH;

Cezar Bogdan Zota, Rüschlikon, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 21/0259 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 29/66553 (2013.01);
Abstract

A semiconductor structure comprises a plurality of gate structures alternately stacked with a plurality of channel layers, and a plurality of epitaxial source/drain regions connected to the plurality of channel layers. The plurality of channel layers are connected to the plurality of epitaxial source/drain regions via a plurality of epitaxial extension regions. Respective pairs of adjacent channel layers of the plurality of channel layers are connected to a given one of the plurality of epitaxial source/drain regions via respective ones of the plurality of epitaxial extension regions.


Find Patent Forward Citations

Loubet, Nicolas. (2024). Formation of nanosheet transistor channels using epitaxial growth (U.S. Patent No. 11984493). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11984493

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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