The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Dec. 05, 2019
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Keun Kyu Song, Seongnam-Si, KR;

Jung Hong Min, Pyeongtaek-Si, KR;

Dae Hyun Kim, Hwaseong-Si, KR;

Dong Uk Kim, Hwaseong-Si, KR;

Hyun Min Cho, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/0066 (2013.01); H01L 33/0093 (2020.05); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light-emitting diode includes a first semiconductor region having a first conductive type; a second semiconductor region having a second conductive type; and an active layer disposed between the first semiconductor region and the second semiconductor region and including phosphorus (P). The light-emitting diode has a rod shape, the second semiconductor region includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, which are sequentially stacked, the first semiconductor layer is disposed between the active layer and the second semiconductor layer, and the second semiconductor layer includes a compound represented by AlGaInP and satisfying Equation 1.


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